SMAJ36HR3G
vs
SMAJ36F1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
YANGZHOU YANGJIE ELECTRONICS CO LTD
Package Description
SMA, 2 PIN
R-PDSO-C2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
48.9 V
48.9 V
Breakdown Voltage-Min
40 V
40 V
Breakdown Voltage-Nom
44.45 V
44.45 V
Clamping Voltage-Max
64.3 V
64.3 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AC
DO-214AC
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Reference Standard
AEC-Q101
Rep Pk Reverse Voltage-Max
36 V
36 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
Tin (Sn)
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
10
Base Number Matches
1
1
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Compare SMAJ36F1 with alternatives