SMAJ36A-QH vs SMAJ36HR2G feature comparison

SMAJ36A-QH Bourns Inc

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SMAJ36HR2G Taiwan Semiconductor

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Yes Yes
Active Obsolete
BOURNS INC TAIWAN SEMICONDUCTOR CO LTD
R-PDSO-C2 R-PDSO-C2
not_compliant compliant
EAR99 EAR99
8541.10.00.50 8541.10.00.50
Bourns
PRSM-MIN EXCELLENT CLAMPING CAPABILITY
44.2 V 48.9 V
40 V 40 V
42.1 V 44.45 V
58.1 V 64.3 V
SINGLE SINGLE
SILICON SILICON
TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
DO-214AC DO-214AC
R-PDSO-C2 R-PDSO-C2
e3 e3
1 1
400 W 400 W
1 1
2 2
150 °C 150 °C
-55 °C -55 °C
PLASTIC/EPOXY PLASTIC/EPOXY
RECTANGULAR RECTANGULAR
SMALL OUTLINE SMALL OUTLINE
NOT SPECIFIED 260
UNIDIRECTIONAL UNIDIRECTIONAL
AEC-Q101 AEC-Q101
36 V 36 V
YES YES
AVALANCHE AVALANCHE
Matte Tin (Sn) MATTE TIN
C BEND C BEND
DUAL DUAL
NOT SPECIFIED 30
1 1
1 W

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