SMAJ33A
vs
SMAJ33AE3G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Contact Manufacturer
Obsolete
Ihs Manufacturer
WEITRON TECHNOLOGY CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Package Description
SMA, 2 PIN
R-PDSO-C2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
40.6 V
40.6 V
Breakdown Voltage-Min
36.7 V
36.7 V
Clamping Voltage-Max
53.3 V
53.3 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AC
DO-214AC
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
33 V
33 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
62
1
Breakdown Voltage-Nom
38.65 V
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max
1 W
Reference Standard
AEC-Q101
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
30
Compare SMAJ33A with alternatives
Compare SMAJ33AE3G with alternatives