SMAJ33-G
vs
SMAJ33AHE2G
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Package Description |
R-PDSO-C2
|
R-PDSO-C2
|
| Reach Compliance Code |
unknown
|
compliant
|
| Breakdown Voltage-Max |
46.5 V
|
40.6 V
|
| Breakdown Voltage-Min |
36.7 V
|
36.7 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
DO-214AC
|
DO-214AC
|
| JESD-30 Code |
R-PDSO-C2
|
R-PDSO-C2
|
| Non-rep Peak Rev Power Dis-Max |
400 W
|
400 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1 W
|
1 W
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
UL RECOGNIZED
|
AEC-Q101
|
| Rep Pk Reverse Voltage-Max |
33 V
|
33 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
C BEND
|
C BEND
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
| Base Number Matches |
2
|
2
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
| Date Of Intro |
|
2016-01-28
|
| Additional Feature |
|
EXCELLENT CLAMPING CAPABILITY
|
| Breakdown Voltage-Nom |
|
38.65 V
|
| Clamping Voltage-Max |
|
53.3 V
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Terminal Finish |
|
MATTE TIN
|
|
|
|
Compare SMAJ33-G with alternatives
Compare SMAJ33AHE2G with alternatives