SMAJ33 vs SMAJ33HF4 feature comparison

SMAJ33 RFE International Inc

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SMAJ33HF4 Taiwan Semiconductor

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Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer RFE INTERNATIONAL INC TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 40.8 V
Clamping Voltage-Max 59 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 33 V 33 V
Surface Mount YES YES
Base Number Matches 2 2
Rohs Code Yes
Package Description R-PDSO-C2
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 44.9 V
Breakdown Voltage-Min 36.7 V
Configuration SINGLE
Diode Element Material SILICON
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 1 W
Reference Standard AEC-Q101
Technology AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30

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