SMAJ26C-GT3 vs SMAJ26C feature comparison

SMAJ26C-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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SMAJ26C Lite-On Semiconductor Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD LITE-ON SEMICONDUCTOR CORP
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown compliant
Breakdown Voltage-Max 36.6 V 35.3 V
Breakdown Voltage-Min 28.9 V 28.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 26 V 26 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 4
Pbfree Code Yes
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Peak Reflow Temperature (Cel) 255
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Compare SMAJ26C with alternatives