SMAJ26C-E3/5A vs TZB160B feature comparison

SMAJ26C-E3/5A Vishay Semiconductors

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TZB160B Semicon Components Inc

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY SEMICONDUCTORS SEMICON COMPONENTS INC
Part Package Code DO-214AC
Package Description R-PDSO-C2 O-XALF-W2
Pin Count 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 35.3 V 168 V
Breakdown Voltage-Min 28.9 V 152 V
Breakdown Voltage-Nom 32.1 V 160 V
Clamping Voltage-Max 46.6 V 219 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2 O-XALF-W2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 300 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 26 V 136 V
Surface Mount YES NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form C BEND WIRE
Terminal Position DUAL AXIAL
Base Number Matches 1 2
Case Connection ISOLATED
Power Dissipation-Max 1 W
Reverse Current-Max 2 µA

Compare SMAJ26C-E3/5A with alternatives

Compare TZB160B with alternatives