SMAJ26A vs PGSMAJ26AHF4G feature comparison

SMAJ26A Eris Technology Corp

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PGSMAJ26AHF4G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer ERIS TECHNOLOGY CORP TAIWAN SEMICONDUCTOR CO LTD
Package Description SMA, 2 PIN SMA, 2 PIN
Reach Compliance Code unknown compliant
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 31.9 V 31.9 V
Breakdown Voltage-Min 28.9 V 28.9 V
Breakdown Voltage-Nom 30.4 V 30.4 V
Clamping Voltage-Max 42.1 V 42.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V 3.5 V
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Rep Pk Reverse Voltage-Max 26 V 26 V
Reverse Current-Max 5 µA 1 µA
Reverse Test Voltage 26 V 26 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
ECCN Code EAR99
HTS Code 8541.10.00.50
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101; IEC-61249-2-21
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

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