SMAJ22A-GT3
vs
MQSMAJP4KE22AE3
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
MICROSEMI CORP
|
Package Description |
R-PDSO-C2
|
R-PDSO-C2
|
Reach Compliance Code |
unknown
|
unknown
|
Breakdown Voltage-Max |
28 V
|
23.1 V
|
Breakdown Voltage-Min |
24.4 V
|
20.9 V
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JEDEC-95 Code |
DO-214AC
|
DO-214AC
|
JESD-30 Code |
R-PDSO-C2
|
R-PDSO-C2
|
Moisture Sensitivity Level |
1
|
1
|
Non-rep Peak Rev Power Dis-Max |
400 W
|
400 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
-65 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
Power Dissipation-Max |
1 W
|
1.52 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Reference Standard |
UL RECOGNIZED
|
|
Rep Pk Reverse Voltage-Max |
22 V
|
18.8 V
|
Surface Mount |
YES
|
YES
|
Technology |
AVALANCHE
|
AVALANCHE
|
Terminal Form |
C BEND
|
C BEND
|
Terminal Position |
DUAL
|
DUAL
|
Base Number Matches |
2
|
1
|
Part Package Code |
|
DO-214AC
|
Pin Count |
|
2
|
ECCN Code |
|
EAR99
|
HTS Code |
|
8541.10.00.50
|
JESD-609 Code |
|
e3
|
Terminal Finish |
|
MATTE TIN
|
|
|
|
Compare SMAJ22A-GT3 with alternatives
Compare MQSMAJP4KE22AE3 with alternatives