SMAJ16CAE3 vs SMAJ170C-G feature comparison

SMAJ16CAE3 Taiwan Semiconductor

Buy Now Datasheet

SMAJ170C-G Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 19.7 V 239.5 V
Breakdown Voltage-Min 17.8 V 189 V
Breakdown Voltage-Nom 18.75 V
Clamping Voltage-Max 26 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Standard AEC-Q101 UL RECOGNIZED
Rep Pk Reverse Voltage-Max 16 V 170 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 2 3
Qualification Status Not Qualified

Compare SMAJ16CAE3 with alternatives

Compare SMAJ170C-G with alternatives