SMAJ160AHE3G
vs
SMAJ160A-Q
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
BOURNS INC
Package Description
R-PDSO-C2
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Date Of Intro
2016-01-28
Additional Feature
EXCELLENT CLAMPING CAPABILITY
PRSM-MIN
Breakdown Voltage-Max
197 V
197 V
Breakdown Voltage-Min
178 V
178 V
Breakdown Voltage-Nom
187.5 V
187.5 V
Clamping Voltage-Max
259 V
259 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AC
DO-214AC
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
Reference Standard
AEC-Q101
AEC-Q101
Rep Pk Reverse Voltage-Max
160 V
160 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
30
Base Number Matches
1
1
Factory Lead Time
16 Weeks
Reverse Current-Max
1 µA
Reverse Test Voltage
160 V
Compare SMAJ160AHE3G with alternatives
Compare SMAJ160A-Q with alternatives