SMAJ14AHE3_A/I vs P4KE200C feature comparison

SMAJ14AHE3_A/I Vishay Intertechnologies

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P4KE200C Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC TAIWAN SEMICONDUCTOR CO LTD
Package Description SMA, 2 PIN
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 8 Weeks
Date Of Intro 2019-02-06
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 17.2 V 220 V
Breakdown Voltage-Min 15.6 V 180 V
Breakdown Voltage-Nom 16.4 V 200 V
Clamping Voltage-Max 23.2 V 287 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AC DO-204AL
JESD-30 Code R-PDSO-C2 O-PALF-W2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3.3 W 1 W
Reference Standard AEC-Q101; UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 14 V 162 V
Reverse Current-Max 1 µA
Reverse Test Voltage 14 V
Surface Mount YES NO
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn) Matte Tin (Sn)
Terminal Form C BEND WIRE
Terminal Position DUAL AXIAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 32
Samacsys Manufacturer Taiwan Semiconductor
Case Connection ISOLATED
Qualification Status Not Qualified

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