SMAJ13A
vs
SMAJ13AHF3G
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
SECOS CORP
TAIWAN SEMICONDUCTOR CO LTD
Package Description
SMA, 2 PIN
R-PDSO-C2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
15.9 V
15.9 V
Breakdown Voltage-Min
14.4 V
14.4 V
Breakdown Voltage-Nom
15.15 V
15.15 V
Clamping Voltage-Max
21.5 V
21.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
13 V
13 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
59
1
Rohs Code
JEDEC-95 Code
DO-214AC
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max
1 W
Reference Standard
AEC-Q101
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
30
Compare SMAJ13A with alternatives
Compare SMAJ13AHF3G with alternatives