SMAJ130 vs S16C24-8-ATR feature comparison

SMAJ130 Taiwan Semiconductor

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S16C24-8-ATR Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description R-PDSO-C2 R-PDSO-G16
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 176 V
Breakdown Voltage-Min 144 V 26.7 V
Breakdown Voltage-Nom 160 V
Clamping Voltage-Max 231 V
Configuration SINGLE SEPARATE, 8 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-G16
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W 300 W
Number of Elements 1 8
Number of Terminals 2 16
Operating Temperature-Max 150 °C 125 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED AEC-Q101
Rep Pk Reverse Voltage-Max 130 V 24 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 140 1
Date Of Intro 2018-07-30

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