SMAJ12AE3/TR13 vs SMAJ12A-H feature comparison

SMAJ12AE3/TR13 Microchip Technology Inc

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SMAJ12A-H Bourns Inc

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC BOURNS INC
Reach Compliance Code compliant not_compliant
Factory Lead Time 20 Weeks
Samacsys Manufacturer Microchip Bourns
Breakdown Voltage-Max 14.7 V 14.7 V
Breakdown Voltage-Min 13.3 V 13.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 12 V 12 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish PURE MATTE TIN Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 1
Package Description R-PDSO-C2
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature PRSM-MIN
JESD-609 Code e3
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard IEC-61000-4-2, 4-4, 4-5
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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