SMAJ12A-TR
vs
SMAJ12A-E3/5A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
STMICROELECTRONICS
VISHAY SEMICONDUCTORS
Part Package Code
DO-214AC
DO-214AC
Pin Count
2
2
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Factory Lead Time
21 Weeks
Samacsys Manufacturer
STMicroelectronics
Additional Feature
MOS COMPATIBLE
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Min
13.3 V
13.3 V
Clamping Voltage-Max
25.3 V
19.9 V
Configuration
SINGLE
SINGLE
Diode Capacitance-Min
1325 pF
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AC
DO-214AC
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
3.3 W
3.3 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
12 V
12 V
Reverse Current-Max
5 µA
1 µA
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Matte Tin (Sn) - annealed
Matte Tin (Sn)
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
30
Base Number Matches
1
2
Pbfree Code
Package Description
R-PDSO-C2
Breakdown Voltage-Max
14.7 V
Breakdown Voltage-Nom
14 V
Forward Voltage-Max (VF)
3.5 V
Reference Standard
UL RECOGNIZED
Reverse Test Voltage
12 V
Compare SMAJ12A-TR with alternatives
Compare SMAJ12A-E3/5A with alternatives