SMAJ120A/51 vs SMAJ120AE3 feature comparison

SMAJ120A/51 Vishay Intertechnologies

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SMAJ120AE3 Taiwan Semiconductor

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 147 V 147 V
Breakdown Voltage-Min 133 V 133 V
Breakdown Voltage-Nom 140 V 140 V
Clamping Voltage-Max 193 V 193 V
Configuration SINGLE SINGLE
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 120 V 120 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Tin/Lead (Sn/Pb) MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 2
Package Description R-PDSO-C2
Additional Feature EXCELLENT CLAMPING CAPABILITY
Diode Element Material SILICON
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 1 W
Reference Standard AEC-Q101
Time@Peak Reflow Temperature-Max (s) 30