SMAJ120
vs
MXSMAJP4KE120AE3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
EIC SEMICONDUCTOR CO LTD
MICROSEMI CORP
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
PRSM-MIN
Breakdown Voltage-Max
163 V
126 V
Breakdown Voltage-Min
133 V
114 V
Breakdown Voltage-Nom
148 V
Clamping Voltage-Max
214 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AC
DO-214AC
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Reference Standard
TS-16949
Rep Pk Reverse Voltage-Max
120 V
102 V
Reverse Current-Max
1 µA
Reverse Test Voltage
120 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
4
2
Part Package Code
DO-214AC
Package Description
R-PDSO-C2
Pin Count
2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Power Dissipation-Max
1.52 W
Qualification Status
Not Qualified
Terminal Finish
MATTE TIN
Compare SMAJ120 with alternatives
Compare MXSMAJP4KE120AE3 with alternatives