SMAJ11-T3 vs JANS1N6120A feature comparison

SMAJ11-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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JANS1N6120A Semtech Corporation

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Rohs Code No No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD SEMTECH CORP
Package Description R-PDSO-C2 HERMETIC SEALED, GLASS PACKAGE-2
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 14.91 V
Breakdown Voltage-Min 12.2 V 37.1 V
Configuration SINGLE COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2 O-LALF-W2
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 400 W 500 W
Number of Elements 1 2
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY GLASS
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1.5 W
Qualification Status Not Qualified Qualified
Reference Standard UL RECOGNIZED MIL-19500/516
Rep Pk Reverse Voltage-Max 11 V 29.7 V
Surface Mount YES NO
Technology AVALANCHE ZENER
Terminal Form C BEND WIRE
Terminal Position DUAL AXIAL
Base Number Matches 1 2
Pbfree Code No
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Nom 39 V
Case Connection ISOLATED
Clamping Voltage-Max 53.6 V
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C

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Compare JANS1N6120A with alternatives