SMAJ11
vs
1N6169E3
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
GENERAL INSTRUMENT CORP
|
MICROSEMI CORP
|
| Package Description |
R-PDSO-C2
|
O-LALF-W2
|
| Reach Compliance Code |
unknown
|
compliant
|
| Breakdown Voltage-Max |
14.9 V
|
|
| Breakdown Voltage-Min |
12.2 V
|
|
| Clamping Voltage-Max |
20.1 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
R-PDSO-C2
|
O-LALF-W2
|
| Non-rep Peak Rev Power Dis-Max |
400 W
|
1500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
BIDIRECTIONAL
|
| Power Dissipation-Max |
1 W
|
3 W
|
| Qualification Status |
Not Qualified
|
|
| Rep Pk Reverse Voltage-Max |
11 V
|
98.8 V
|
| Reverse Current-Max |
5 µA
|
|
| Surface Mount |
YES
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
C BEND
|
WIRE
|
| Terminal Position |
DUAL
|
AXIAL
|
| Base Number Matches |
45
|
1
|
| Rohs Code |
|
Yes
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
| Additional Feature |
|
HIGH RELIABILITY
|
| Case Connection |
|
ISOLATED
|
| JESD-609 Code |
|
e3
|
| Terminal Finish |
|
MATTE TIN
|
|
|
|
Compare SMAJ11 with alternatives
Compare 1N6169E3 with alternatives