SMAJ10CAE3/TR13 vs SMAJ10CAHE3_A/H feature comparison

SMAJ10CAE3/TR13 Microchip Technology Inc

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SMAJ10CAHE3_A/H Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant unknown
Factory Lead Time 20 Weeks 8 Weeks
Samacsys Manufacturer Microchip
Breakdown Voltage-Max 12.3 V 12.3 V
Breakdown Voltage-Min 11.1 V 11.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 3.3 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 10 V 10 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish PURE MATTE TIN Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Package Description SMA, 2 PIN
ECCN Code EAR99
HTS Code 8541.10.00.50
Date Of Intro 2019-02-06
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom 11.7 V
Clamping Voltage-Max 17 V
JESD-609 Code e3
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101; UL RECOGNIZED
Reverse Current-Max 2 µA
Reverse Test Voltage 10 V
Time@Peak Reflow Temperature-Max (s) 30

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Compare SMAJ10CAHE3_A/H with alternatives