SMAFJ64C
vs
PGSMAJ64CAE3G
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Obsolete
Ihs Manufacturer
LESHAN RADIO CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Package Description
R-PDSO-F2
R-PDSO-C2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
78.6 V
78.6 V
Breakdown Voltage-Min
71.1 V
71.1 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-F2
R-PDSO-C2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Rep Pk Reverse Voltage-Max
64 V
64 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Tin (Sn)
MATTE TIN
Terminal Form
FLAT
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Rohs Code
Date Of Intro
2018-07-17
Breakdown Voltage-Nom
74.85 V
Clamping Voltage-Max
103 V
JEDEC-95 Code
DO-214AC
Peak Reflow Temperature (Cel)
260
Reference Standard
AEC-Q101
Reverse Current-Max
1 µA
Reverse Test Voltage
64 V
Time@Peak Reflow Temperature-Max (s)
30
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