SMAFJ16C vs PGSMAJ16CAE2G feature comparison

SMAFJ16C LRC Leshan Radio Co Ltd

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PGSMAJ16CAE2G Taiwan Semiconductor

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Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer LESHAN RADIO CO LTD TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PDSO-F2 R-PDSO-C2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 19.7 V 19.7 V
Breakdown Voltage-Min 17.8 V 17.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-F2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Rep Pk Reverse Voltage-Max 16 V 16 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Tin (Sn) MATTE TIN
Terminal Form FLAT C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 1
Rohs Code Yes
Date Of Intro 2018-07-17
Breakdown Voltage-Nom 18.75 V
Clamping Voltage-Max 26 V
JEDEC-95 Code DO-214AC
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101
Reverse Current-Max 1 µA
Reverse Test Voltage 16 V
Time@Peak Reflow Temperature-Max (s) 30

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