SM6T7V5CA-M3/52
vs
P6SBMJ7.5CAGP
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
VISHAY SEMICONDUCTORS
CHENMKO ENTERPRISE CO LTD
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN
Breakdown Voltage-Max
7.88 V
7.88 V
Breakdown Voltage-Min
7.13 V
7.13 V
Breakdown Voltage-Nom
7.51 V
Clamping Voltage-Max
11.3 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
5 W
5 W
Rep Pk Reverse Voltage-Max
6.4 V
6.4 V
Reverse Current-Max
1000 µA
Reverse Test Voltage
6.4 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Matte Tin (Sn)
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Base Number Matches
1
2
Package Description
R-PDSO-C2
Compare SM6T7V5CA-M3/52 with alternatives
Compare P6SBMJ7.5CAGP with alternatives