SM6T7V5AHE3_A/I vs SMBJP6KE7.5AE3 feature comparison

SM6T7V5AHE3_A/I Vishay Intertechnologies

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SMBJP6KE7.5AE3 Microsemi Corporation

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC MICROSEMI CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Date Of Intro 2019-02-07
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 7.88 V 7.88 V
Breakdown Voltage-Min 7.13 V 7.13 V
Breakdown Voltage-Nom 7.51 V
Clamping Voltage-Max 14.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 1.38 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 6.4 V 6.4 V
Reverse Current-Max 500 µA
Reverse Test Voltage 6.4 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 1
Package Description R-PDSO-C2

Compare SM6T7V5AHE3_A/I with alternatives

Compare SMBJP6KE7.5AE3 with alternatives