SM6T7V5A-M3/52
vs
P6SMB7.5AHM3/H
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
parentfamilyid
71990182
Ihs Manufacturer
VISHAY SEMICONDUCTORS
VISHAY INTERTECHNOLOGY INC
Package Description
R-PDSO-J2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Category CO2 Kg
8.54
8.54
Compliance Temperature Grade
Military: -65C to +150C
EU RoHS Version
RoHS 2 (2015/863/EU)
RoHS 2 (2015/863/EU)
EU RoHS Exemptions
7(a), 7(c)-I
7(a), 7(c)-I
EFUP
50
50
Conflict Mineral Status
DRC Conflict Free
DRC Conflict Free
Conflict Mineral Status Source
CMRT V6.31
CMRT V5.11
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
7.88 V
Breakdown Voltage-Min
7.13 V
Breakdown Voltage-Nom
7.51 V
Clamping Voltage-Max
11.3 V
Configuration
SINGLE
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
JESD-30 Code
R-PDSO-J2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
600 W
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity
UNIDIRECTIONAL
Power Dissipation-Max
5 W
Rep Pk Reverse Voltage-Max
6.4 V
Surface Mount
YES
Technology
AVALANCHE
Terminal Finish
Matte Tin (Sn)
Matte Tin (Sn)
Terminal Form
J BEND
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
30
Base Number Matches
2
1
Rohs Code
Compare SM6T7V5A-M3/52 with alternatives
Compare P6SMB7.5AHM3/H with alternatives