SM6T6V8AHE3_A/I vs SM6T6V8A-E3/52 feature comparison

SM6T6V8AHE3_A/I Vishay Intertechnologies

Buy Now Datasheet

SM6T6V8A-E3/52 Vishay Semiconductors

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC VISHAY SEMICONDUCTORS
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Date Of Intro 2019-02-07
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY ,HIGH RELIABILITY
Breakdown Voltage-Max 7.14 V 7.14 V
Breakdown Voltage-Min 6.45 V 6.45 V
Breakdown Voltage-Nom 6.8 V 6.8 V
Clamping Voltage-Max 13.4 V 13.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 5.8 V 5.8 V
Reverse Current-Max 1000 µA
Reverse Test Voltage 5.8 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn) Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code DO-214AA
Package Description R-PDSO-C2
Pin Count 2
Samacsys Manufacturer Vishay
Case Connection CATHODE
Qualification Status Not Qualified

Compare SM6T6V8AHE3_A/I with alternatives

Compare SM6T6V8A-E3/52 with alternatives