SM6T6V8A vs SM6T6V8AHE3/5B feature comparison

SM6T6V8A General Instrument Corp

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SM6T6V8AHE3/5B Vishay Semiconductors

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer GENERAL INSTRUMENT CORP VISHAY SEMICONDUCTORS
Reach Compliance Code unknown unknown
Additional Feature LOW INDUCTANCE EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY
Breakdown Voltage-Max 7.14 V 7.14 V
Breakdown Voltage-Min 6.45 V 6.45 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 4 1
Pbfree Code Yes
Rohs Code Yes
Part Package Code DO-214AA
Package Description R-PDSO-C2
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 6.8 V
Case Connection CATHODE
Clamping Voltage-Max 13.4 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 5.8 V
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 40

Compare SM6T6V8A with alternatives

Compare SM6T6V8AHE3/5B with alternatives