SM6T6V8A
vs
SM6T6V8AHE3/5B
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
GENERAL INSTRUMENT CORP
VISHAY SEMICONDUCTORS
Reach Compliance Code
unknown
unknown
Additional Feature
LOW INDUCTANCE
EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY
Breakdown Voltage-Max
7.14 V
7.14 V
Breakdown Voltage-Min
6.45 V
6.45 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
5 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
4
1
Pbfree Code
Yes
Rohs Code
Yes
Part Package Code
DO-214AA
Package Description
R-PDSO-C2
Pin Count
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Nom
6.8 V
Case Connection
CATHODE
Clamping Voltage-Max
13.4 V
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
600 W
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Peak Reflow Temperature (Cel)
260
Rep Pk Reverse Voltage-Max
5.8 V
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
40
Compare SM6T6V8A with alternatives
Compare SM6T6V8AHE3/5B with alternatives