SM6T30A
vs
TA6L30AHM3/H
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
GENERAL INSTRUMENT CORP
VISHAY INTERTECHNOLOGY INC
Reach Compliance Code
unknown
compliant
Additional Feature
LOW INDUCTANCE
EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY
Breakdown Voltage-Max
31.5 V
31.5 V
Breakdown Voltage-Min
28.5 V
28.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-221AD
JESD-30 Code
R-PDSO-C2
R-PDSO-F2
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
Qualification Status
Not Qualified
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
FLAT
Terminal Position
DUAL
DUAL
Base Number Matches
4
1
Rohs Code
ECCN Code
EAR99
HTS Code
8541.10.00.50
Factory Lead Time
8 Weeks
Date Of Intro
2018-05-13
Samacsys Manufacturer
Vishay
Breakdown Voltage-Nom
30 V
Clamping Voltage-Max
41.4 V
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
600 W
Operating Temperature-Max
185 °C
Operating Temperature-Min
-65 °C
Peak Reflow Temperature (Cel)
260
Reference Standard
AEC-Q101
Rep Pk Reverse Voltage-Max
25.6 V
Reverse Current-Max
5 µA
Reverse Test Voltage
25.6 V
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Time@Peak Reflow Temperature-Max (s)
30
Compare SM6T30A with alternatives
Compare TA6L30AHM3/H with alternatives