SM6T12A vs P6SMB12A-AU_R2_100A1 feature comparison

SM6T12A General Instrument Corp

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P6SMB12A-AU_R2_100A1 PanJit Semiconductor

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer GENERAL INSTRUMENT CORP PAN JIT INTERNATIONAL INC
Reach Compliance Code unknown not_compliant
Additional Feature LOW INDUCTANCE
Breakdown Voltage-Max 12.6 V 12.6 V
Breakdown Voltage-Min 11.4 V 11.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 10.2 V 10.2 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 4 1
Rohs Code Yes
Package Description R-PDSO-C2
ECCN Code EAR99
HTS Code 8541.10.00.50
Non-rep Peak Rev Power Dis-Max 600 W
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard AEC-Q101; TS 16949
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Compare P6SMB12A-AU_R2_100A1 with alternatives