SM6T10C vs SMBJ8.5C-E3/52 feature comparison

SM6T10C STMicroelectronics

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SMBJ8.5C-E3/52 Vishay Intertechnologies

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer STMICROELECTRONICS VISHAY INTERTECHNOLOGY INC
Package Description R-PDSO-C2
Pin Count 2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature UL RECOGNIZED EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 10.5 V 11.5 V
Breakdown Voltage-Min 9.5 V 9.44 V
Breakdown Voltage-Nom 10 V 10.47 V
Clamping Voltage-Max 18.6 V 15.9 V
Configuration SINGLE SINGLE
Diode Capacitance-Min 1400 pF
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 4 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 8.1 V 8.5 V
Reverse Current-Max 10 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 2
JEDEC-95 Code DO-214AA
Reference Standard UL RECOGNIZED

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