SM6T10A
vs
SM6T10A-E3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MDE SEMICONDUCTOR INC
VISHAY SEMICONDUCTORS
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
10.5 V
10.5 V
Breakdown Voltage-Min
9.5 V
9.5 V
Breakdown Voltage-Nom
10 V
Clamping Voltage-Max
14.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
8.55 V
8.55 V
Reverse Current-Max
10 µA
Reverse Test Voltage
8.55 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
30
Base Number Matches
4
1
Pbfree Code
Part Package Code
DO-214AA
Package Description
R-PDSO-C2
Pin Count
2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Power Dissipation-Max
5 W
Qualification Status
Not Qualified
Terminal Finish
Matte Tin (Sn)
Compare SM6T10A with alternatives
Compare SM6T10A-E3 with alternatives