SM6464
vs
JAN1N6464US
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MICROSEMI CORP
BKC SEMICONDUCTORS INC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
METALLURGICALLY BODED
Breakdown Voltage-Min
16.4 V
16.4 V
Breakdown Voltage-Nom
16.4 V
Case Connection
NONE
ISOLATED
Clamping Voltage-Max
26.5 V
26.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LELF-R2
O-MELF-R2
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
GLASS
METAL
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
2.5 W
5 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
15 V
15 V
Reverse Current-Max
500 µA
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
WRAP AROUND
WRAP AROUND
Terminal Position
END
END
Base Number Matches
1
6
JESD-609 Code
e0
Reference Standard
MIL-19500/551
Terminal Finish
TIN LEAD
Compare SM6464 with alternatives
Compare JAN1N6464US with alternatives