SM4T10 vs JAN1N5643ATR feature comparison

SM4T10 STMicroelectronics

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JAN1N5643ATR Microsemi Corporation

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer STMICROELECTRONICS MICROSEMI CORP
Package Description R-PDSO-C2 O-MALF-W2
Pin Count 2 2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 11 V 28.4 V
Breakdown Voltage-Min 9.5 V 25.7 V
Breakdown Voltage-Nom 10 V
Clamping Voltage-Max 18.6 V
Configuration SINGLE SINGLE
Diode Capacitance-Min 2000 pF
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 O-MALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY METAL
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 1 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 8.1 V 23.1 V
Reverse Current-Max 10 µA
Surface Mount YES NO
Technology AVALANCHE AVALANCHE
Terminal Form C BEND WIRE
Terminal Position DUAL AXIAL
Base Number Matches 10 1
Pbfree Code No
Part Package Code DO-13
Case Connection CATHODE
JEDEC-95 Code DO-202AA
JESD-609 Code e0
Operating Temperature-Min -65 °C
Reference Standard MIL-19500
Terminal Finish TIN LEAD

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