SM15T7V5AY vs 1.5SMC7.5AHR7 feature comparison

SM15T7V5AY STMicroelectronics

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1.5SMC7.5AHR7 Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer STMICROELECTRONICS TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer STMicroelectronics
Breakdown Voltage-Max 7.88 V 7.88 V
Breakdown Voltage-Min 7.13 V 7.13 V
Breakdown Voltage-Nom 7.5 V 7.5 V
Clamping Voltage-Max 14.5 V 11.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -40 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard AEC-Q101; ISO 7637-2; ISO 10605 AEC-Q101
Rep Pk Reverse Voltage-Max 6.4 V 6.4 V
Reverse Current-Max 250 µA
Reverse Test Voltage 6.4 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn) MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Base Number Matches 1 1
Package Description R-PDSO-C2
Additional Feature EXCELLENT CLAMPING CAPABILITY
Power Dissipation-Max 6.5 W

Compare SM15T7V5AY with alternatives

Compare 1.5SMC7.5AHR7 with alternatives