SM15T150/7
vs
MVSMCJLCE130ATR
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
GENERAL SEMICONDUCTOR INC
MICROSEMI CORP
Part Package Code
DO-214AB
DO-214AB
Package Description
R-PDSO-C2
R-PDSO-C2
Pin Count
2
2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
LOW INDUCTANCE
TR, 7 INCH: 750
Breakdown Voltage-Max
158 V
159 V
Breakdown Voltage-Min
143 V
144 V
Breakdown Voltage-Nom
150 V
151.5 V
Clamping Voltage-Max
207 V
209 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
6.5 W
5 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
128 V
130 V
Reverse Test Voltage
128 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Rohs Code
JESD-609 Code
e0
Moisture Sensitivity Level
1
Reference Standard
MIL-19500
Terminal Finish
TIN LEAD
Compare SM15T150/7 with alternatives
Compare MVSMCJLCE130ATR with alternatives