SIHP5N50D-E3
vs
2N7290H1
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
End Of Life
|
Obsolete
|
| Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
HARRIS SEMICONDUCTOR
|
| Package Description |
ROHS COMPLIANT PACKAGE-3
|
FLANGE MOUNT, R-MSFM-P3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Vishay
|
|
| Avalanche Energy Rating (Eas) |
23 mJ
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
500 V
|
500 V
|
| Drain Current-Max (ID) |
5.3 A
|
5 A
|
| Drain-source On Resistance-Max |
1.5 Ω
|
1.42 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-220AB
|
TO-257AA
|
| JESD-30 Code |
R-PSFM-T3
|
R-MSFM-P3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
METAL
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
104 W
|
|
| Pulsed Drain Current-Max (IDM) |
10 A
|
15 A
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
PIN/PEG
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
2
|
| Additional Feature |
|
RADIATION HARDENED
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare SIHP5N50D-E3 with alternatives
Compare 2N7290H1 with alternatives