SIHP22N60E-E3
vs
SPP20N65C3XKSA1
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Not Recommended
Ihs Manufacturer
VISHAY SILICONIX
INFINEON TECHNOLOGIES AG
Part Package Code
TO-220AB
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED
AVALANCHE RATED
Avalanche Energy Rating (Eas)
367 mJ
690 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
650 V
Drain Current-Max (ID)
21 A
20.7 A
Drain-source On Resistance-Max
0.18 Ω
0.19 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
227 W
Pulsed Drain Current-Max (IDM)
56 A
62.1 A
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Pbfree Code
Rohs Code
Factory Lead Time
4 Weeks
Samacsys Manufacturer
Infineon
JESD-609 Code
e3
Terminal Finish
Tin (Sn)
Compare SIHP22N60E-E3 with alternatives
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