SIHFR024-GE3
vs
IRFR024
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
VISHAY SILICONIX
|
SAMSUNG SEMICONDUCTOR INC
|
| Package Description |
SMALL OUTLINE, R-PSSO-G2
|
DPAK-3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
91 mJ
|
9.5 mJ
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
60 V
|
60 V
|
| Drain Current-Max (ID) |
14 A
|
15 A
|
| Drain-source On Resistance-Max |
0.1 Ω
|
0.1 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-252AA
|
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
42 W
|
42 W
|
| Pulsed Drain Current-Max (IDM) |
56 A
|
60 A
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
4
|
| Pin Count |
|
3
|
| HTS Code |
|
8541.29.00.95
|
| Power Dissipation Ambient-Max |
|
42 W
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare SIHFR024-GE3 with alternatives
Compare IRFR024 with alternatives