SIHFD024
vs
IRFD024
feature comparison
Pbfree Code |
No
|
No
|
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
VISHAY SILICONIX
|
INTERNATIONAL RECTIFIER CORP
|
Part Package Code |
DIP
|
DIP
|
Package Description |
IN-LINE, R-PDIP-T3
|
DIP-4
|
Pin Count |
4
|
4
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
91 mJ
|
91 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
60 V
|
Drain Current-Max (ID) |
2.5 A
|
2.5 A
|
Drain-source On Resistance-Max |
0.1 Ω
|
0.1 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDIP-T3
|
R-PDIP-T3
|
JESD-609 Code |
e0
|
e0
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
1.3 W
|
1.3 W
|
Pulsed Drain Current-Max (IDM) |
20 A
|
20 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN LEAD
|
TIN LEAD
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
2
|
HTS Code |
|
8541.29.00.95
|
Power Dissipation Ambient-Max |
|
1.3 W
|
|
|
|
Compare SIHFD024 with alternatives
Compare IRFD024 with alternatives