SIHF9530STL-E3
vs
IRF9630STRR
feature comparison
Pbfree Code |
Yes
|
No
|
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
VISHAY SILICONIX
|
INTERNATIONAL RECTIFIER CORP
|
Part Package Code |
D2PAK
|
D2PAK
|
Package Description |
SMALL OUTLINE, R-PSSO-G2
|
SMALL OUTLINE, R-PSSO-G2
|
Pin Count |
4
|
4
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas) |
400 mJ
|
500 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
DS Breakdown Voltage-Min |
100 V
|
200 V
|
Drain Current-Max (ID) |
12 A
|
6.5 A
|
Drain-source On Resistance-Max |
0.3 Ω
|
0.8 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-263AB
|
TO-263AB
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
JESD-609 Code |
e3
|
e0
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Power Dissipation-Max (Abs) |
88 W
|
|
Pulsed Drain Current-Max (IDM) |
48 A
|
26 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
TIN LEAD
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
30
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
HTS Code |
|
8541.29.00.95
|
Case Connection |
|
DRAIN
|
Power Dissipation Ambient-Max |
|
74 W
|
|
|
|
Compare SIHF9530STL-E3 with alternatives
Compare IRF9630STRR with alternatives