SIHB22N65E-GE3 vs STI23NM60N feature comparison

SIHB22N65E-GE3 Vishay Intertechnologies

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STI23NM60N STMicroelectronics

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC STMICROELECTRONICS
Package Description SMALL OUTLINE, R-PSSO-G2 ROHS COMPLIANT, TO-262, I2PAK-3
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 21 Weeks
Samacsys Manufacturer Vishay STMicroelectronics
Avalanche Energy Rating (Eas) 691 mJ 700 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V 600 V
Drain Current-Max (ID) 22 A 19 A
Drain-source On Resistance-Max 0.18 Ω 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 4 pF
JEDEC-95 Code TO-263AB TO-262AA
JESD-30 Code R-PSSO-G2 R-PSIP-T3
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 227 W 150 W
Pulsed Drain Current-Max (IDM) 56 A 76 A
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 40
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 186 ns
Turn-on Time-Max (ton) 111 ns
Base Number Matches 1 1
Part Package Code TO-262AA
Pin Count 3
JESD-609 Code e3
Qualification Status Not Qualified
Terminal Finish MATTE TIN

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