SIHB22N60AE-GE3
vs
SIHB22N65E-GE3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
VISHAY INTERTECHNOLOGY INC
Package Description
SMALL OUTLINE, R-PSSO-G2
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
19 Weeks
19 Weeks
Date Of Intro
2016-09-25
Samacsys Manufacturer
Vishay
Vishay
Avalanche Energy Rating (Eas)
204 mJ
691 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
650 V
Drain Current-Max (ID)
20 A
22 A
Drain-source On Resistance-Max
0.18 Ω
0.18 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
49 A
56 A
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Pbfree Code
Case Connection
DRAIN
Feedback Cap-Max (Crss)
4 pF
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
227 W
Turn-off Time-Max (toff)
186 ns
Turn-on Time-Max (ton)
111 ns
Compare SIHB22N60AE-GE3 with alternatives
Compare SIHB22N65E-GE3 with alternatives