SIHB20N50E-GE3
vs
SIHP20N50E-GE3
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
VISHAY INTERTECHNOLOGY INC
|
Package Description |
SMALL OUTLINE, R-PSSO-G2
|
FLANGE MOUNT, R-PSFM-T3
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
18 Weeks
|
18 Weeks
|
Samacsys Manufacturer |
Vishay
|
Vishay
|
Avalanche Energy Rating (Eas) |
204 mJ
|
204 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
500 V
|
500 V
|
Drain Current-Max (ID) |
19 A
|
19 A
|
Drain-source On Resistance-Max |
0.184 Ω
|
0.184 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
6 pF
|
|
JEDEC-95 Code |
TO-263AB
|
TO-220AB
|
JESD-30 Code |
R-PSSO-G2
|
R-PSFM-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
179 W
|
|
Pulsed Drain Current-Max (IDM) |
42 A
|
42 A
|
Surface Mount |
YES
|
NO
|
Terminal Form |
GULL WING
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Max (toff) |
146 ns
|
|
Turn-on Time-Max (ton) |
88 ns
|
|
Base Number Matches |
1
|
1
|
|
|
|
Compare SIHB20N50E-GE3 with alternatives
Compare SIHP20N50E-GE3 with alternatives