SI9945AEY-T1-E3
vs
UPA1857GR-9JG
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
VISHAY SILICONIX
RENESAS ELECTRONICS CORP
Part Package Code
SOT
TSSOP
Package Description
SMALL OUTLINE, R-PDSO-G8
POWER, TSSOP-8
Pin Count
8
8
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
3.7 A
3.8 A
Drain-source On Resistance-Max
0.08 Ω
0.095 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
Number of Elements
2
2
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
25 A
15.2 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
TIN LEAD
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Pbfree Code
Avalanche Energy Rating (Eas)
33 mJ
Transistor Application
SWITCHING
Compare SI9945AEY-T1-E3 with alternatives
Compare UPA1857GR-9JG with alternatives