SI7842DP
vs
BSC072N03LDG
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
VISHAY SILICONIX
|
INFINEON TECHNOLOGIES AG
|
| Part Package Code |
SOT
|
|
| Package Description |
SMALL OUTLINE, R-XDSO-C6
|
SMALL OUTLINE, R-PDSO-F6
|
| Pin Count |
8
|
8
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
30 V
|
30 V
|
| Drain Current-Max (ID) |
6.3 A
|
11.5 A
|
| Drain-source On Resistance-Max |
0.022 Ω
|
0.0094 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-XDSO-C6
|
R-PDSO-F8
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
1
|
2
|
| Number of Terminals |
8
|
8
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
UNSPECIFIED
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
30 A
|
80 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN LEAD
|
Tin (Sn)
|
| Terminal Form |
C BEND
|
FLAT
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
2
|
| Pbfree Code |
|
Yes
|
| Samacsys Manufacturer |
|
Infineon
|
| Additional Feature |
|
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
|
| Avalanche Energy Rating (Eas) |
|
90 mJ
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Max |
|
150 °C
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Power Dissipation-Max (Abs) |
|
57 W
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare SI7842DP with alternatives
Compare BSC072N03LDG with alternatives