SI6926ADQ-T1-E3
vs
2N3955A
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
End Of Life
Obsolete
Ihs Manufacturer
VISHAY SILICONIX
INTERSIL CORP
Part Package Code
TSSOP
Package Description
SMALL OUTLINE, R-PDSO-G8
Pin Count
8
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
Drain Current-Max (ID)
4.1 A
Drain-source On Resistance-Max
0.03 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JUNCTION
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
Number of Elements
2
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
200 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
1 W
0.25 W
Qualification Status
Not Qualified
Surface Mount
YES
NO
Terminal Finish
MATTE TIN
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Element Material
SILICON
Base Number Matches
2
9
Compare SI6926ADQ-T1-E3 with alternatives