SI6467BDQ-T1-E3
vs
UPA1816GR-9JG-E1-AT
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
VISHAY SILICONIX
|
RENESAS ELECTRONICS CORP
|
| Part Package Code |
TSSOP
|
TSSOP
|
| Package Description |
SMALL OUTLINE, R-PDSO-G8
|
,
|
| Pin Count |
8
|
0
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
5A002
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
12 V
|
|
| Drain Current-Max (ID) |
6.8 A
|
9 A
|
| Drain-source On Resistance-Max |
0.0125 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-G8
|
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
8
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
1.5 W
|
2 W
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
1
|
| Samacsys Manufacturer |
|
Renesas Electronics
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare SI6467BDQ-T1-E3 with alternatives
Compare UPA1816GR-9JG-E1-AT with alternatives