SI6434DQ
vs
FDS6612AS62Z
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
SILICONIX INC
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
TSSOP
SOT
Pin Count
8
8
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
5.6 A
8.4 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e0
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
1.5 W
Surface Mount
YES
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Base Number Matches
3
1
Package Description
SMALL OUTLINE, R-PDSO-G8
DS Breakdown Voltage-Min
30 V
Drain-source On Resistance-Max
0.022 Ω
JESD-30 Code
R-PDSO-G8
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Qualification Status
Not Qualified
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compare SI6434DQ with alternatives
Compare FDS6612AS62Z with alternatives