SI4925DDY-T1-GE3
vs
ZXMP3A17DN8TC
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
DIODES INC
|
Package Description |
HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOP-8
|
SOIC-8
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Vishay
|
|
Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
8 A
|
3.4 A
|
Drain-source On Resistance-Max |
0.029 Ω
|
0.07 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
MS-012AA
|
|
JESD-30 Code |
R-PDSO-G8
|
R-PDSO-G8
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
2
|
2
|
Number of Terminals |
8
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Power Dissipation-Max (Abs) |
5 W
|
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Matte Tin (Sn)
|
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Part Package Code |
|
SOT
|
Pin Count |
|
8
|
Qualification Status |
|
Not Qualified
|
|
|
|
Compare SI4925DDY-T1-GE3 with alternatives
Compare ZXMP3A17DN8TC with alternatives